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RETRACTED ARTICLE: Field-Induced Superconductivity in MoS2

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This article was retracted on 05 September 2014

Abstract

Semiconducting TMDs are nowadays attracting great interest after the invention of the so-called “Scotch-tape method” established in graphene research. Semiconducting TMDs are front-runners of “post graphene” materials for their finite band gap crucial for device applications. MoS2 is the most widely used TMD because of its application as a solid lubricant. Scientifically, it shows superconductivity after alkali or alkaline-earth doping with a highest T c of around 7 K. Recently, we succeeded in inducing superconductivity in the MoS2 transistor adopting electric double layer (EDL), a nanosized capacitor, as a gate dielectric. The field-induced superconducting transition of MoS2 was realized with a maximum T c around 11 K, the highest not only within a reported MoS2 compound, but also among TMDs. This highest T c lies in the carrier density region much smaller than a chemically doped compound; a low density region has never been successfully accessed by chemical methods. Combining a HfO2 (high-k) back gate, quasi-continuous control of carrier density, and thus quantum phase, was demonstrated to unveil the phase diagram; the T c exhibits strong carrier density dependence with a superconducting dome. Our result implies a common existence of the superconducting dome in 2D band insulators.

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Acknowledgements

This work was supported by Grant-in-Aid for Scientific Research (S) (No. 21224009) from Japan and Strategic International Collaborative Research Program (SICORP), Japan Science and Technology Agency. Y.I. was supported by the Japan Society for the Promotion of Science (JSPS) through its Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).

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Authors and Affiliations

  1. Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo, 113-8656, Japan

    J. T. Ye, Y. J. Zhang, M. Yoshida, Y. Saito & Y. Iwasa

  2. Device Physics of Complex Materials, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9700, AE, Groningen, The Netherlands

    J. T. Ye

  3. CERG, RIKEN, Hirosawa 2-1, Wako, 351-0198, Japan

    Y. Iwasa

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  1. J. T. Ye
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  2. Y. J. Zhang
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  3. M. Yoshida
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  4. Y. Saito
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  5. Y. Iwasa
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Corresponding author

Correspondence to J. T. Ye.

Additional information

Because of excessive overlap with Ye, J.T., Zhang, Y.J., Akashi, R., Bahramy, M.S., Arita, R., Iwasa, Y.: Superconducting dome in a gate-tuned band insulator. Science 338, 1193 (2012). doi: 10.1126/science.1228006, Ye, J.T., Zhang, Y.J., Yoshida, M., Saito, Y., Iwasa, Y.: Field-induced superconductivity in MoS2. Journal of Superconductivity and Novel Magnetism 27, 981–985 (2014). doi: 10.1007/s10948-013-2422-y has been withdrawn at the request of the authors.

An erratum to this article can be found online at http://dx.doi.org/10.1007/s10948-014-2750-6.

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Ye, J.T., Zhang, Y.J., Yoshida, M. et al. RETRACTED ARTICLE: Field-Induced Superconductivity in MoS2 . J Supercond Nov Magn 27, 981–985 (2014). https://doi.org/10.1007/s10948-013-2422-y

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  • DOI: https://doi.org/10.1007/s10948-013-2422-y

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