Optical Properties of Mn-Implanted GaN Nanorods

  • Im Taek Yoon
  • Yoon Shon
  • Young S. Park
  • T. W. Kang
Original Paper

Abstract

We have investigated the optical properties of vertical GaN nanorods with diameters of 150 nm grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy followed by Mn ion implantation and annealing. The GaN nanorods are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV. For GaMnN nanorods, Arrhenius plots of the intensities of the Mn acceptor give a thermal activation energy of Δ=350 meV, indicating that the thermal quenching of the Mn-related PL peak is due to the dissociation of an acceptor-bound hole from the temperature-dependent PL spectra. This suggests that the Mn-bound holes in GaN nanorods exhibit the impurity states predicted by the hydrogen model.

Keywords

Photoluminescence Mn-Implantation Nanorods Semi-conducting III–V materials 

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Copyright information

© Springer Science+Business Media New York 2012

Authors and Affiliations

  • Im Taek Yoon
    • 1
  • Yoon Shon
    • 1
  • Young S. Park
    • 2
  • T. W. Kang
    • 1
  1. 1.Quantum Functional Semiconductor Research CenterDongguk UniversitySeoulKorea
  2. 2.Center for Superfunctional MaterialsPohang University of Science and TechnologyPohangKorea

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