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Exciting Dilute Magnetic Semiconductor: Copper-Doped ZnO

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Abstract

The present study is focused on the copper-doped ZnO system. Bulk copper-doped ZnO pellets were synthesized by a solid-state reaction technique and used as target material in pulsed laser deposition. Thin films were grown for different Cu doped pellets on sapphire substrates in vacuum (5×10−5 mbar). Thin films having (002) plane of ZnO showed different oxidation states of dopants. M–H curves exhibited weak ferromagnetic signal for 1–3 % Cu doping but for 5 % Cu doped thin film sample showed the diamagnetic behavior. For deeper information, thin films were grown for 5 % Cu doped ZnO bulk pellet in different oxygen ambient pressures and analyzed. PL measurement at low temperature showed the emission peak in thin films samples due to acceptor-related transitions. XPS results show that copper exists in Cu2+ and Cu+1 valence states in thin films and with increasing O2 ambient pressure the valence-band maximum in films shifts towards higher binding energy. Furthermore, in lower oxygen ambient pressure (1×10−2 mbar) thin films showed magnetic behavior but this vanished for the film grown at higher ambient pressures of oxygen (6×10−2 mbar), which hints towards the decrease in donor defects.

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Authors and Affiliations

  1. Natural Science and Science Education, National Institute of Education, Nanyang Technological University, Singapore, 637616, Singapore

    S. Karamat, R. S. Rawat, T. L. Tan, P. Lee & S. V. Springham

  2. Department of Physics, COMSATS Institute of Information Technology, 22060, Islamabad, Pakistan

    S. Karamat &  Anis-ur-Rehman

  3. Division of Physics and Applied Physics, School of Physical & Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore

    R. Chen & H. D. Sun

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  1. S. Karamat
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  2. R. S. Rawat
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  3. T. L. Tan
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  4. P. Lee
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  5. S. V. Springham
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Correspondence to S. Karamat.

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Karamat, S., Rawat, R.S., Tan, T.L. et al. Exciting Dilute Magnetic Semiconductor: Copper-Doped ZnO. J Supercond Nov Magn 26, 187–195 (2013). https://doi.org/10.1007/s10948-012-1710-2

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  • DOI: https://doi.org/10.1007/s10948-012-1710-2

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