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Critical Behavior of Ferromagnetic Transition in SnO2-Based Diluted Magnetic Semiconductor

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Abstract

Isothermal magnetization data in the critical region of the ferromagnetic transition for Co-doped SnO2-based diluted magnetic semiconductor were measured and analyzed in terms of the modified Arrott plot method and, independently by the Kouvel–Fisher method. The critical exponents β,γ, and δ, corresponding to spontaneous magnetization, initial susceptibility and isothermal magnetization, respectively, were determined and the values are found to be comparable to the mean-field model. The critical exponent values are found to be consistent with the Widom scaling relation and the universal scaling hypothesis. The temperature variation of the effective critical exponent is found to show the characteristic behavior of a disordered system.

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Acknowledgements

The authors are thankful to Department of Science and Technology, New Delhi (Sanction No. SR/S2/CMP-0078/2010(G)) and Board of Research in Nuclear Sources, Mumbai (Sanction no. 2010/37P/10/BRNS) for financial support.

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  1. Department of Physics, Indian Institute of Technology Guwahati, Guwahati, 781039, India

    Sunita Mohanty & S. Ravi

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  1. Sunita Mohanty
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Mohanty, S., Ravi, S. Critical Behavior of Ferromagnetic Transition in SnO2-Based Diluted Magnetic Semiconductor. J Supercond Nov Magn 26, 157–164 (2013). https://doi.org/10.1007/s10948-012-1697-8

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