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Electrical Manipulation of Spin Injection into a Single InAs Quantum Dots

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Abstract

We demonstrate spin injection from a n-Zn0.96Mn0.04Se layer into individual InAs quantum dots (SQDs) in a p–i–n diode structure using cw polarization resolved magneto-micro photoluminescence spectroscopy. Interestingly, we find that the spin injection efficiency strongly varies from dot to dot. We obtain a single quantum dot circular polarization degree ranging from 2% to almost 50% (at B=4 T) at zero biasing and within the spectral range studied here, we found 2 maxima of the degree of the circular polarization at SQD energies separated by ∼33 meV. Importantly, we demonstrate that the spin injection efficiency can be manipulated by external forward biasing (U ext).

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Authors and Affiliations

  1. Werkstoffe der Elektrotechnik, Universität Duisburg-Essen, Bismarckstrasse 81, 47057, Duisburg, Germany

    M. Ghali, T. Kümmell, R. Arians & G. Bacher

  2. Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, 97074, Würzburg, Germany

    J. Wenisch, S. Mahapatra & K. Brunner

Authors
  1. M. Ghali
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  2. T. Kümmell
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  3. R. Arians
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  4. J. Wenisch
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  5. S. Mahapatra
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  6. K. Brunner
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  7. G. Bacher
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Correspondence to M. Ghali.

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Ghali, M., Kümmell, T., Arians, R. et al. Electrical Manipulation of Spin Injection into a Single InAs Quantum Dots. J Supercond Nov Magn 20, 413–416 (2007). https://doi.org/10.1007/s10948-007-0283-y

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  • DOI: https://doi.org/10.1007/s10948-007-0283-y

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