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Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature

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Abstract

We report zero-magnetic-field spin injection from FePt into GaAs at room temperature using FePt/MgO/GaAs-based light-emitting diode heterostructures. Experiments are performed on two samples with different compositions; Fe61Pt39 and Fe57Pt43. The polarizations of injected electrons at 0 T for these two samples are at least 1.5% and 3.3%, respectively. The higher zero-magnetic-field injected spin polarization is considered to be due to the better remanent perpendicular magnetization of the FePt layer in the sample with Fe57Pt43.

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Author notes

  1. Asawin Sinsarp

    Present address: Department of Physics, Faculty of Science, Mahidol University, Rama 6 Road, Bangkok, 10400, Thailand

Authors and Affiliations

  1. Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8568, Japan

    Asawin Sinsarp, Fumiyoshi Takano & Hiro Akinaga

  2. Department of Electronics and Computer Science, Faculty of Science Engineering, Tokyo University of Science, Yamaguchi, 1-1-1 Daigaku-dori, Sanyo-Onoda, Yamaguchi, 756-0884, Japan

    Takashi Manago

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  1. Asawin Sinsarp
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  2. Takashi Manago
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  3. Fumiyoshi Takano
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  4. Hiro Akinaga
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Correspondence to Asawin Sinsarp.

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Sinsarp, A., Manago, T., Takano, F. et al. Electrical Spin Injection in Perpendicular Magnetized FePt/MgO/GaAs Heterostructures at Room Temperature. J Supercond Nov Magn 20, 405–408 (2007). https://doi.org/10.1007/s10948-007-0244-5

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  • DOI: https://doi.org/10.1007/s10948-007-0244-5

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