Ferromagnetic Resonance and Hall Effect Characterization of GaMnSb Layers

Abstract

The electrical and magnetic properties of GaSb:Mn layers deposited on (100)GaAs substrates from a laser plasma in vacuum have been studied. It is shown that the films deposited at 200–440 °C are mosaic single crystalline and epitaxial to the substrate, with p-type conduction. Manganese-doped layers had a hole concentration higher than 1×10¹⁹ cm⁻³ and fairly high values of mobility (up to 40 cm²/V s at 300 K). The layers grown at 200 °C exhibited an anomalous Hall effect up to approximately room temperature. On the contrary, a normal Hall effect was observed in the layers grown at 440 °C. Ferromagnetic resonance measurements have revealed the existence of ferromagnetism in the sample grown at 200 °C. The transition temperature is close to room temperature, in full agreement with the Hall data. In the sample grown at 440 °C, the formation of ferromagnetic clusters has tentatively been concluded.