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Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K

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Abstract

The authors have investigated the magnetic properties of heavily Mn-doped ferromagnetic semiconductor Ga1−x Mn x As thin film with the Mn concentration x of 15.2% grown by molecular-beam epitaxy at relatively high growth temperature of 250 °C. Magnetic circular dichroism and the anomalous Hall effect measurements indicate that this thin film holds the intrinsic ferromagnetic semiconductor features. By low-temperature annealing, the resistivity was significantly decreased and the Curie temperature was largely enhanced from 95 K to 172.5 K.

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Author notes

  1. Kenichi Ohno

    Present address: Research Center for Advanced Science and Technology, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo, 153-8505, Japan

Authors and Affiliations

  1. Department of Electronic Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan

    Kenichi Ohno, Shinobu Ohya & Masaaki Tanaka

  2. PRESTO Japan Science and Technology Agency, 4-1-8 Honcho, Kawaguchi, Saitama, 332-0012, Japan

    Shinobu Ohya

Authors
  1. Kenichi Ohno
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  2. Shinobu Ohya
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  3. Masaaki Tanaka
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Corresponding author

Correspondence to Masaaki Tanaka.

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Ohno, K., Ohya, S. & Tanaka, M. Properties of Heavily Mn-doped GaMnAs with Curie Temperature of 172.5 K. J Supercond Nov Magn 20, 417–420 (2007). https://doi.org/10.1007/s10948-007-0238-3

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  • DOI: https://doi.org/10.1007/s10948-007-0238-3

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