Abstract
Cr x Ge1− x (x ∼ 0.08) films were grown on GaAs (001) and Ge (001) substrates using molecular beam epitaxy (MBE) method, and their magnetic and transport properties have been studied in the temperature range between 1.8 and 300 K. All of the films exhibited weak paramagnetic behavior. Transport measurements showed that magnetoresistance ratio and the anomalous Hall resistance depend on the Cr concentration x and the kinds of substrate.
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Itaya, S., Yamamoto, Y. & Hori, H. Novel IV-Group Based Diluted Magnetic Semiconductor: Cr x Ge1− x . J Supercond 18, 83–85 (2005). https://doi.org/10.1007/s10948-005-2155-7
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DOI: https://doi.org/10.1007/s10948-005-2155-7