Abstract
Growth conditions for MnGeP2 thin films have been investigated by using molecular beam epitaxy (MBE) method. Mn and Ge were evaporated by K-cells, and P2 was supplied by decomposing tertialybutylphosphine (TBP). GaAs (001) and InP (001) single crystals were used as substrates. An X-ray diffraction peak, which can be assigned to (008) peak of MnGeP2, was observed at nearly the same position as the (004) peak of GaAs. The lattice constant of the MnGeP2 thin film was determined to be 1.13 nm assuming its crystal structure is a c-axis oriented chalcopyrite type structure. Secondary phases such as GeP, MnGe x and MnP were observed for beam fluxes of Mn and Ge as high as 1×10−8 Torr.
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Ishibashi, T., Minami, K., Jogo, J. et al. MnGeP2 Thin Films Grown by Molecular Beam Epitaxy. J Supercond 18, 79–82 (2005). https://doi.org/10.1007/s10948-005-2154-8
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DOI: https://doi.org/10.1007/s10948-005-2154-8