Abstract
A self-consistent Luttinger–Kohn (LK) calculation is used to obtain the electronic structure of Mn-doped semiconductor multilayers. In the particular, case of a (In,Ga)As/GaAs heterostructure, the ternary alloy has a smaller gap than GaAs, and introduces strain due to the differences on the lattice parameters. The aim of this work is to understand how the charge and the spin polarization densities can be controlled by the parameters of the structure in such way that they appear concentrated either on the magnetic or in the non-magnetic region. We show that by changing the In concentration the valence band mismatch competes with the energy splitting due to the magnetic interaction, and we can manipulate the charge and the spin polarization densities in the structure.
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Lima, I.C.d.C., Rodrigues, S.C.P., Sipahi, G.M. et al. Controlling the Charge and the Spin Polarization Distributions in (In,Ga,Mn)As-Based Diluted Magnetic Semiconductor Multilayered Structures. J Supercond 18, 61–67 (2005). https://doi.org/10.1007/s10948-005-2151-y
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DOI: https://doi.org/10.1007/s10948-005-2151-y