Abstract
Cr- and Mn-doped InN films were successfully grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Low temperature GaN buffer layers grown by metal-organic vapor-phase epitaxy were used to accommodate the large lattice mismatch between InN and sapphire. A high n-type carrier concentration of 1.5×1020 cm−3 was measured in InN films with 3% Cr-doping. Films of this type exhibit a well-defined in-plane magnetic hysteresis loop and remanence for temperatures varying from 5 to 300K. The Mn-doped films, however, turned out to exhibit less clear magnetic properties. Thus, ferromagnetism in Cr-doped InN can be concluded from our measurements.
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Ney, A., Rajaram, R., Farrow, R.F.C. et al. Mn- and Cr-Doped InN: A Promising Diluted Magnetic Semiconductor Material. J Supercond 18, 41–46 (2005). https://doi.org/10.1007/s10948-005-2148-6
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DOI: https://doi.org/10.1007/s10948-005-2148-6