Abstract
We report current-induced magnetization reversal in a ferromagnetic semiconductor-based magnetic tunnel junction (Ga,Mn)As/AlAs/(Ga,Mn)As prepared by molecular beam epitaxy on a p-GaAs(001) substrate. A change in magneto-resistance that is asymmetric with respect to the current direction is found with the excitation current of 106 A/cm2. Contributions of both unpolarized and spin-polarized components are examined, and we conclude that the partial magnetization reversal occurs in the (Ga,Mn)As layer having smaller magnetization with the spin-polarized tunneling current of 105 A/cm2.
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Moriya, R., Hamaya, K., Oiwa, A. et al. Magnetization Reversal by Electrical Spin Injection in Ferromagnetic (Ga,Mn)As-Based Magnetic Tunnel Junctions. J Supercond 18, 3–7 (2005). https://doi.org/10.1007/s10948-005-2141-0
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DOI: https://doi.org/10.1007/s10948-005-2141-0