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Channel Width Dependence of Spin Polarized Transports in NiFe/InGaAs Hybrid Two-Terminal Structures

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Abstract

We investigated spin polarized transports in NiFe/InGaAs hybrid two-terminal structures at 1.5K as well as their channel width dependence. The two-terminal structures were fabricated in order to neglect the local Hall effect (LHE) by fringe fields of NiFe contacts. First, we measured magneto-resistance (MR) characteristics of the samples under vertical magnetic fields, and obtained clear oscillations indicating the ohmic formation at NiFe/InGaAs interfaces. Next, we measured spin valve (SV) properties under parallel magnetic fields, and successfully observed clear SV peaks without LHE hysterisis loops. Furthermore, we also confirmed unique behavior of SV peaks depending on the channel width. Such dependence also indicates spin injection/detection through NiFe/InGaAs interfaces.

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ACKNOWLEDGMENTS

The authors thank Dr. S. Gozu and Mr. H. Sato for wafer preparation. This work is partially supported by a Grant-in-Aid for Scientific Research in Priority Areas “Semiconductor Nanospintronics” (No. 14076213) of The Ministry of Education, Culture, Sports, Science and Technology, Japan and by Mitsubishi, SCAT, and The Nakajima Foundations for Science and Technology.

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  1. Center for Nano Materials and Technology (CNMT), Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Tatsunokuchi, Ishikawa, 923-1292, Japan

    Masashi Akabori, Katsushige Suzuki & Syoji Yamada

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  1. Masashi Akabori
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  2. Katsushige Suzuki
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  3. Syoji Yamada
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Akabori, M., Suzuki, K. & Yamada, S. Channel Width Dependence of Spin Polarized Transports in NiFe/InGaAs Hybrid Two-Terminal Structures. J Supercond 18, 367–370 (2005). https://doi.org/10.1007/s10948-005-0011-4

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  • DOI: https://doi.org/10.1007/s10948-005-0011-4

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