Abstract
The results of the atomic structure optimization and the calculation of electronic characteristics for strained silicon clusters Si51 on a germanium substrate are presented. The effects of deformation and the substrate on the distribution of electron state are analyzed.
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S. I. Kurganskii and N.A. Borshch, FTP, 38, No. 5, 580–584 (2004).
V. V. Ivanovskaya and A. L. Ivanovskii, Teor. Éxp. Khim., 42, No. 4, 199–203 (2006).
N. A. Borshch, N. S. Pereslavtseva, and S. I. Kurganskii, FTP, 40, No.12, 1457–1462 (2006).
G. S. Plotnikov and V. B. Zaitsev, Physical Bases for Molecular Electronics [in Russian], Moscow State Univ., Moscow (2000).
S. V. Filimonov and B. Voigtländer, Surface Science, 512, No. 1, L335–L340 (2002).
M. Ya. Valakh, V. N. Dzhagan, and L. A. Matveeva, FTP, 37, No. 4, 460–464 (2003).
V. P. Dragunov, Nauch. Vesti NGTU, No. 2, 71–84 (2003).
T. B. Boykin, G. Klimeck, M. A. Eriksson, et al., Appl. Phys. Lett., 84, No. 1, 115 (2004).
D. E. Segall, Ismail-Beigi Sohram, and T. A. Arias, Phys. Rev. B, 65, No. 21, 214109 (2002).
M. E. Solov’ev and M. M. Solov’ev, Computer Chemistry [in Russian], Solon-Press, Moscow (2005).
S. S. Batsanov, Structural Chemistry. Facts and Dependences [in Russian], Dialog-GU, Moscow (2000).
J. J. P. Stewart, J. Comput. Chem., 12, No. 3, 320–341 (1991).
V. I. Minkin, B. Ya. Simkin, and R. M. Minyaev, The Theory of Molecule Structure [in Russian], Feniks, Rostov-on-Don (1997).
P. I. Baranskii, V. P. Klochkov, and I. V. Potykevich, Semiconductor Electronics. Properties of Materials [in Russian], Naukova dumka, Kiev (1975).
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Original Russian Text Copyright © 2007 by V. V. Filippov, S. I. Kurganskii, and N. S. Pereslavtseva
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Translated from Zhurnal Strukturnoi Khimii, Vol. 48, No. 5, pp. 1016–1019, September–October, 2007.
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Filippov, V.V., Kurganskii, S.I. & Pereslavtseva, N.S. Quantum chemical modeling of the structure of strained silicon nanocrystals. J Struct Chem 48, 960–963 (2007). https://doi.org/10.1007/s10947-007-0141-6
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DOI: https://doi.org/10.1007/s10947-007-0141-6