Abstract
Results are obtained from the experimental studies (atomic force and transmission microscopy) of the influence of III/V flux ratio on the topography and internal structure of LT MBE films of InGaAs and GaAs. The layers are shown to contain both the surface growth defects — the volcano-like pits and microdrops of III group elements, and the bulk defects — dislocations, stacking faults, microtwins, and phase microheterogeneities. A high-temperature annealing results in the additional formation of thermal etching pits at the surface and the nanosized arsenic clusters in the bulk. The origin of the defects is discussed.
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Original Russian Text Copyright © 2004 by L. L. Anisimova, A. K. Gutakovskii, I. V. Ivonin, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, and S. V. Subach
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Translated from Zhurnal Strukturnoi Khimii, Vol. 45, Supplement, pp. 96–101, 2004.
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Anisimova, L.L., Gutakovskii, A.K., Ivonin, I.V. et al. Defect formation in LT MBE InGaAs and GaAs. J Struct Chem 45 (Suppl 1), S96–S102 (2004). https://doi.org/10.1007/s10947-006-0101-6
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DOI: https://doi.org/10.1007/s10947-006-0101-6