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Layer arrangement in the structure of octakis-(trimethylsiloxy)octasilsesquioxane and dodecakis-(trimethylsiloxy)cyclohexasiloxane

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Abstract

Layers of [(CH3)3SiO]8(SiO1.5)8 and [(CH3)3SiO]12(SiO)6 organosilicon compounds obtained by chemical vapor deposition were investigated by X-ray diffraction (DRON-RM4, R = 192 mm, CuK α radiation) and Raman spectroscopy (Triplemate, SPEX). The layers were found to be ideally oriented polycrystalline films. The octakis-(trimethylsiloxy)octasilsesquioxane polycrystals are oriented in one crystallographic direction — [001], while the dodecakis-(trimethylsiloxy)cyclohexa-siloxane polycrystals are oriented in the \(\left[ {\bar 120} \right]\) and \(\left[ {\bar 111} \right]\) directions. Crystal structure analysis in these directions yielded the type of the planar lattice followed by the molecules and their orientation relative to the support.

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Original Russian Text Copyright © 2004 by S. A. Gromilov, T. V. Basova, D. Yu. Emel’yanov, A. V. Kuzmin, and S. A. Prokhorova

Translated from Zhurnal Strukturnoi Khimii, Vol. 45, No. 3, pp. 497–501, May–June 2004.

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Gromilov, S.A., Basova, T.V., Emel’yanov, D.Y. et al. Layer arrangement in the structure of octakis-(trimethylsiloxy)octasilsesquioxane and dodecakis-(trimethylsiloxy)cyclohexasiloxane. J Struct Chem 45, 471–475 (2004). https://doi.org/10.1007/s10947-005-0015-8

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  • DOI: https://doi.org/10.1007/s10947-005-0015-8

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