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Passively Q-Switched Mode-Locking Nd:(Gd0.3Y0.7)2SiO5 Laser Based on Semiconductor Saturable Absorber Mirror

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Abstract

A diode-end-pumped continuous-wave and passively Q-switched mode-locked Nd:(Gd0.3Y0.7)2SiO5 laser was designed. At a pump power of 0.8W, we achieve dual-wavelength continuous-wave (CW) laser generation at wavelengths around 1,073.26 and 1,076.62 nm. Using a semiconductor saturable absorber mirror (SESAM), we obtain passively Q-switched mode-locked (QML) operation. A maximum average output power of 171 mW is obtained under a pump power of 5 W. The optical conversion efficiency for the QML laser is 3.4%. The duration of the mode-locked pulse is estimated to be about 649 ps at a repetition rate of 101.34 MHz.

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Correspondence to Bingyuan Zhang.

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Tian, Z., Wang, B., Gao, C. et al. Passively Q-Switched Mode-Locking Nd:(Gd0.3Y0.7)2SiO5 Laser Based on Semiconductor Saturable Absorber Mirror. J Russ Laser Res 40, 94–99 (2019). https://doi.org/10.1007/s10946-019-09775-7

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  • DOI: https://doi.org/10.1007/s10946-019-09775-7

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