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Depth-resolved impact of integration process on porosity and solvent diffusion in a SiOCH low-k material

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Abstract

The impact of plasma etching and chemical wet cleaning on solvent diffusion in porous network of a SiOCH low-k dielectric material is studied. Characterization of porosity and pore size distribution by means of ellipso-porosimetry and positron annihilation lifetime spectroscopy are presented. The results are compared with solvent diffusion kinetics, measured using probe molecules of different polarity, surface energies and molecular sizes. Infrared spectroscopy, Doppler broadening of annihilation radiation and time-of-flight secondary ion mass spectrometry measurements are also performed to investigate material modifications causing variations of diffusion kinetics.

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References

  1. W. Volksen, R.D. Miller, G. Dubois, Low dielectric constant materials. Chem. Rev. 110(1), 56–110 (2010)

    Article  CAS  Google Scholar 

  2. L. Broussous, G. Berthout, D. Rébiscoul, V. Rouessac, A. Ayral, Microelectron. Eng. 87(3), 466–469 (2010)

    Article  CAS  Google Scholar 

  3. M.R. Baklanov, K.P. Mogilnikov, V.G. Polovinkin, F.N. Dultsev, J. Vac. Sci. Technol. B 18(3), 1385 (2000)

    Article  CAS  Google Scholar 

  4. W. Puyrenier, V. Rouessac, L. Broussous, D. Rébiscoul, A. Ayral, Microporous Mesoporous Mater. 160, 40–48 (2007)

    Article  Google Scholar 

  5. M. H. Weber, K. G. Lynn, Y. C. Jean, P. E. Mallon and D. M. Schrader, in Principles and Applications of Positron and Positronium Chemistry, (World Scientific, Singapore, 2002), p.167

  6. S. Gates, S. Papa Rao, V. Anandan, M. Krishnan, S. Cohen, Y. Ostrovski, N. Klymko, M. Chace and D. Canaperi, Microelectronic Engineering, no. 82–88, p. 91, (2012)

  7. V. McGahay, Materials 3, 536–562 (2010)

    Article  CAS  Google Scholar 

  8. J. C. Vickerman, D. Briggs, ToF–SIMS: Surface Analysis by Mass Spectrometry (IM Publications, Chichester, 2001)

  9. N. Rochat, A. Chabli, F. Bertin, M. Olivier, and C. Vergnaud, J. Appl. Phys. 91, 5029 (2002)

    Google Scholar 

  10. H. Marinov, N. Djourelov, P. Nédélec, L. Petrov, Nuclear instruments and methods in physics research section a: accelerators. Spectrom. Detect. Assoc. Equip. 729, 569–575 (2013)

    Article  CAS  Google Scholar 

  11. T. Goworek, K. Ciesielski, B. Jasińska, J. Wawryszczuk, Chem. Phys. 230, 305–315 (1998)

    Article  CAS  Google Scholar 

  12. D.W. Gidley, W.E. Frieze, T.L. Dull, A.F. Yee, E.T. Ryan, H.M. Ho, Phys. Rev. B 60, R5157 (1999)

    Article  CAS  Google Scholar 

  13. C. Licitra, R. Bouyssou, T. Chevolleau, N. Rochat, F. Bertin, AIP Conf. Proc. 1173, 149 (2009)

    Article  CAS  Google Scholar 

  14. N.E. Hill, W.E. Vaughan, A.H. Price, M. Davies, Dielectrical Properties and Molecular Behaviour (Van Nostrand Reinhold, London, 1969), p. 236

    Google Scholar 

  15. V. Rouessac, A. van der Lee, F. Bosc, J. Durand, A. Ayral, Microporous Mesoporous Mater. 111, 417–428 (2008)

    Article  CAS  Google Scholar 

  16. A. van Veen, H. Schut, M. Clement, J.M.M. de Nijs, A. Kruseman, M.R. Ijpma, Appl. Surf. Sci. 85, 216–224 (1995)

    Article  Google Scholar 

  17. R.S. Brusa, M. Spagolla, G.P. Karwasz, A. Zecca, G. Ottaviani, F. Corni, M. Bacchetta, E. Carollo, J. Appl. Phys. 95(5), 2348–2354 (2004)

    Article  CAS  Google Scholar 

  18. K. P. Mogilnikov, M. R. Baklanov, D. Shamiryan and M. P. Petkov, Jpn. J. Appl. Phys. 43, no. 1, 247–248, (2004)

    Google Scholar 

  19. A.J. Rivera de Mena, Ph.D. thesis, (Delft University of Technology: Delft University of Technology, 2003), pp. 83–84

  20. M. Goldman, D. Graves, G. Antonelli, S. Behera, J. Kelber, Oxygen radical and plasma damage of low-k organosilicate glass materials: diffusion-controlled mechanism for carbon depletion. J. Appl. Phys. 106, 013311 (2009)

    Article  Google Scholar 

  21. R. Zaleski, Positronium Lifetime vs. Temperature and Free Volume Size Tables. Pick-Off Model Calculations, (Institute of Physics, Maria Curie-Sklodowska University, Lublin, 2002)

  22. R. Zaleski, J. Wawryszczuk, A. Borówka, J. Goworek, T. Goworek, Microporous Mesoporous Mater. 62, 47–60 (2003)

    Article  CAS  Google Scholar 

  23. C. He, T. Oka, Y. Kobayashi, N. Oshima, T. Ohdaira, A. Kinomura, R. Suzuki, Appl. Phys. Lett. 91, 024102 (2007)

    Article  Google Scholar 

  24. R. Hurand, R. Bouyssou, M. Darnon, C. Tiphine, C. Licitra, M. El-kodadi, T. Chevolleau, T. David, N. Posseme, M. Besacier, P. Schiavone, F. Bailly, O. Joubert and C. Verove, in Interconnect Technology Conference and 2011 Materials for Advanced Metallization (IITC/MAM), 2011 IEEE International, pp.1–3 (2011)

  25. Q.T. Le, M.R. Baklanov, E. Kesters, A. Azioune, H. Struyf, W. Boullart, J.-J.V.S. Pireaux, Electrochem. Solid-State Lett. 8(7), F21–F24 (2005)

    Article  CAS  Google Scholar 

  26. H. Yang, G.G. Lucovsky, J. Vac. Sci. Technol. A 16(3), 1525–1528 (1998)

    Article  CAS  Google Scholar 

  27. D.M. Knotter, J. Am. Chem. Soc. 122(18), 4345–4351 (2000)

    Article  CAS  Google Scholar 

  28. A.B. Hall, G.J. Irvine, S.M. Gates, M.W. Lane, Appl. Phys. Lett. 101, 202901 (2012)

    Article  Google Scholar 

  29. G.A.C.M. Spierings, J. Mater. Sci. 28(23), 6261–6273 (1993)

    Article  CAS  Google Scholar 

  30. D.J. Michalak, S. Rivillon Amy, D. Aureau, M. Dai, E. A, Y.J. Chabal, Nat. Mater. 9, 266–271 (2010)

    CAS  Google Scholar 

  31. C. Brinker, J. Non-Cryst. Solids 100, 31–50 (1988)

    Article  CAS  Google Scholar 

  32. R.S. Mikhail, S.A. Selim, F. Shebl, Egypt J. Chem. 19(3), 405–415 (1976)

    CAS  Google Scholar 

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Acknowledgments

The authors thank C. Trouiller for dynamic ToF–SIMS measurements. We also gratefully acknowledge G. Imbert, P. Brun, and F. Bailly for blanket SiOCH samples, technical support and useful discussions and L. Petrov for the positron beam electronics support.

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Authors and Affiliations

  1. STMicroelectronics, 850, rue Jean Monnet, 38926, Crolles cedex, France

    M. Lépinay, L. Broussous & K. Courouble

  2. Institut Européen des Membranes, CNRS/ENSCM/UM2, CC047, 2, place Eugène Bataillon, 34095, Montpellier cedex 5, France

    M. Lépinay, V. Rouessac & A. Ayral

  3. CEA, LETI, MINATEC Campus, 17 rue des Martyrs, 38054, Grenoble Cedex 9, France

    M. Lépinay, C. Licitra & F. Bertin

  4. INRNE-BAS, 72 Tzarigradsko chaussee Blvd, 1784, Sofia, Bulgaria

    N. Djourelov & H. Marinov

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  1. M. Lépinay
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  2. N. Djourelov
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  3. H. Marinov
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  6. C. Licitra
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Correspondence to M. Lépinay.

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Lépinay, M., Djourelov, N., Marinov, H. et al. Depth-resolved impact of integration process on porosity and solvent diffusion in a SiOCH low-k material. J Porous Mater 21, 475–484 (2014). https://doi.org/10.1007/s10934-014-9794-7

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  • DOI: https://doi.org/10.1007/s10934-014-9794-7

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