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Fabrication and Characterization of Boron-Implanted Silicon Superconducting Thin Films on SOI Substrates for Low-Temperature Detectors

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Abstract

In this paper, we discuss the characterization of boron-doped silicon superconducting thin films with a thickness of 70 nm made on silicon-on-insulator substrates by ion implantation and ultra-violet nanosecond laser annealing under nitrogen at atmospheric pressure. Two different ion-implanted doses of boron of 1 × 1016 and 2.5 × 1016 cm−2 at 3 keV were tested in the study. Single laser pulses with energy densities in the range of 0.3–1.1 J/cm2 were applied to activate the boron species in the silicon. A transition from partially (monocrystalline) to fully-melted (polycrystalline) silicon is observed when increasing the laser energy density. The critical temperature (Tc) and the upper critical magnetic field (Bc2) were measured for different samples. A maximum Tc of 100 mK was obtained in the monocrystalline phase of the silicon just before the transition into the polycrystalline phase. An obvious impact of the doping level and laser annealing energy density on the Tc values was observed. Different morphological and physical characterizations such as transmission electron microscopy, X-ray photoelectron spectroscopy and secondary ion mass spectrometry were performed and analyzed in order to compare the samples.

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Acknowledgements

This work has been supported by Optics and Photonics Department of CEA-LETI. The authors would like to thank SCREEN company and its French subsidiary LASSE for helping in operating and maintaining the LT-3100 laser annealing system.

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Authors and Affiliations

  1. CEA, LETI, Université Grenoble Alpes, 38000, Grenoble, France

    A. Aliane, L. Dussopt, S. Kerdilès, H. Kaya, P. Acosta-Alba, N. Bernier, A.-M. Papon, E. Martinez & M. Veillerot

  2. CEA, IRIG, Université Grenoble Alpes, 38000, Grenoble, France

    F. Lefloch

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  1. A. Aliane
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  2. L. Dussopt
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  3. S. Kerdilès
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  4. H. Kaya
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  5. P. Acosta-Alba
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  6. N. Bernier
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  7. A.-M. Papon
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  8. E. Martinez
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  9. M. Veillerot
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  10. F. Lefloch
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Contributions

"A.A. analyzed and investigated the results and wrote the main manuscript text, L.D. Project leader and reviewed the manuscript, S.K, prepared the samples, investigated and reviewed the manuscript, H.K. and P.A-A. prepared the samples, N.B. and A-M.P. provided TEM images, E.M. performed XPS analysis, M.V. performed SIMS analysis and reviewed the manuscript and F.L. performed the electrical characterizations at low temperature."

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Correspondence to A. Aliane.

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Aliane, A., Dussopt, L., Kerdilès, S. et al. Fabrication and Characterization of Boron-Implanted Silicon Superconducting Thin Films on SOI Substrates for Low-Temperature Detectors. J Low Temp Phys (2024). https://doi.org/10.1007/s10909-024-03122-0

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