Abstract
To search for dark matter candidates with masses below \(\mathcal {O}\)(MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1–100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the single-electron level. A low-capacitance (\(\sim \)1.6 pF) HEMT is used as a buffer stage at T = 10 mK to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance (\(\sim \)200 pF) HEMT amplifier stage at T = 4 K. Importantly, the design of this amplifier makes it usable with any insulating material—allowing for rapid prototyping of a variety of novel detector materials. We present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons.
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Anczarski, J., Dubovskov, M., Fink, C.W. et al. Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors. J Low Temp Phys 214, 256–262 (2024). https://doi.org/10.1007/s10909-023-03046-1
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DOI: https://doi.org/10.1007/s10909-023-03046-1