Abstract
Spin-dependent electron tunneling in InAs/GaAs double-barrier heterostructures was theoretically studied using the matrix method. The effects of Dresselhaus spin–orbit interaction, in-plane wave vector, magnetic field, the magnitude of an electric field, and negative field on its spin-transport were discussed. The Dresselhaus spin–orbit interaction enhances the spin polarization and energy between spin resonances. The in-plane wave vector shifts the resonance of polarization, and the increasing in-plane wave vector shifts the resonance to a higher value on the energy scale. The increasing magnetic field enhances the Zeeman splitting and causes enhanced polarization. The spin splitting was achieved due to the tunable magnitude of the electric field, and the negative electric field highly influences the spin transport properties.
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Chandrasekar, L.B., Karunakaran, M. & Gnanasekar, K. Spin-Polarized Transport in InAs/GaAs Double-Barrier Heterostructure with Electric and Magnetic Fields. J Low Temp Phys 210, 241–250 (2023). https://doi.org/10.1007/s10909-022-02872-z
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DOI: https://doi.org/10.1007/s10909-022-02872-z