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Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications

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Abstract

Superconducting-insulating-superconducting trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/Ti0.4N0.6, deposited at 450 °C, in a thermal ALD reactor on Al2O3-coated silicon. The conformal nature of the ALD process provides excellent step coverage of superconducting and insulating films. The film thickness of a single ALD cycle, being one mono-layer, allows us to precisely control the tunnel-barrier insulator thickness by counting the number of ALD cycles during the insulator deposition step. Tunnel junctions with critical current approximately 500 A/cm2 are reported. Fabrication of Josephson Junctions and progress toward development of a single-element ALD superconducting quantum interference device are discussed.

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References

  1. S.K. Tolpygo, V. Bolkhovsky, T.J. Weir, A. Wynn, D.E. Oates, L.M. Johnson, M.A. Gouker, Advanced fabrication processes for superconducting very large scale integrated circuits. IEEE Trans. Appl. Superconduct. 26(3), 1–10 (2016)

    Article  Google Scholar 

  2. P. Wahlgren, The Radio Frequency Single-Electron Transistor and the Horizon Picture for Tunneling (Chalmers University of Technology, Göteburg, 1998), pp. 36–37

    Google Scholar 

  3. A.A. Kozhevnikov, Electron Dynamics and Coherence Effects in Mesoscopic Hybrid Normal Metal—Superconductor Devices (Yale University, New Haven, 2001), pp. 71–94

    Google Scholar 

  4. M.B. Ketchen, DC SQUIDs 1980: the state of the art. IEEE Trans. Mag. 17(1), 387–394 (1981)

    Article  ADS  Google Scholar 

  5. J.M. Jaycox, M.B. Ketchen, Planar coupling scheme for ultra low noise DC SQUIDs. IEEE Trans. Mag. 17(1), 400–403 (1981)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. NASA Goddard Space Flight Center, Greenbelt, MD, USA

    C. A. Jhabvala, P. C. Nagler & T. R. Stevenson

Authors
  1. C. A. Jhabvala
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  2. P. C. Nagler
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  3. T. R. Stevenson
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Correspondence to C. A. Jhabvala.

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Jhabvala, C.A., Nagler, P.C. & Stevenson, T.R. Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications. J Low Temp Phys 200, 331–335 (2020). https://doi.org/10.1007/s10909-020-02466-7

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  • DOI: https://doi.org/10.1007/s10909-020-02466-7

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