Abstract
Single-pixel prototype superconductor–insulator–superconductor (SIS) mixer integrated circuits (ICs) for multi-beam heterodyne receivers were fabricated. We introduced plasma-enhanced chemical vapor deposition (PE-CVD) for insulator layer deposition and machine-aligned via-hole etching for contact-hole definition on SIS junctions to achieve high uniformity and yield. In the PE-CVD, we applied a compressive/tensile/compressive SiO2 trilayer technique to control the film stress. The SiO2 trilayer stress was stable and negligibly low. The uniformity and junction quality yield of the single-pixel prototype SIS mixer ICs were improved in the process applying the PE-CVD and the via-hole etching.
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Acknowledgements
The authors are grateful to Akihira Miyachi and Matthias Kroug of NAOJ for their input on the fabrication processes. This work was supported in part by the Japan Society for the Promotion of Science KAKENHI under Grant Number 18K03708.
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Ezaki, S., Shan, W. & Uzawa, Y. Fabrication of Planar-Integrated SIS Mixer Circuits with Improved Uniformity and Yield. J Low Temp Phys 199, 369–375 (2020). https://doi.org/10.1007/s10909-020-02433-2
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DOI: https://doi.org/10.1007/s10909-020-02433-2