Abstract
This paper describes an on-wafer characterization system and calibration technique for frequency up and down converters based on a superconductor–insulator–superconductor (SIS) tunnel junction. The measurement system uses a 4-K probe station in combination with a vector network analyzer which allows measurement of both up- and down-conversion gains and reflection coefficients. We employed and verified a scalar mixer calibration technique for accurate characterization of the conversion properties. We present the detailed measurement technique and verification using an SIS frequency converter sample.
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Acknowledgements
This work was supported by JSPS KAKENHI under Grants JP19H02205 and JP18H03881. The authors would like to thank Tomonori Tamura for fabrication of the SIS junction.
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Kojima, T., Uzawa, Y., Shan, W. et al. On-Wafer Cryogenic Characterization Technique of an SIS-Based Frequency Up and Down Converter. J Low Temp Phys 199, 219–224 (2020). https://doi.org/10.1007/s10909-020-02414-5
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DOI: https://doi.org/10.1007/s10909-020-02414-5