Abstract
We present the noise performance of high electron mobility transistors (HEMT) developed by CNRS/C2N laboratory. Various HEMT’s gate geometries with 2 pF to 230 pF input capacitance have been studied at 4 K. A model for both voltage and current noises has been developed with frequency dependence up to 1 MHz. These HEMTs exhibit low dissipation, excellent noise performance and can advantageously replace traditional Si-JFETs for the readout of high impedance thermal sensor and semiconductor ionization cryogenic detectors. Our model predicts that cryogenic germanium detectors of 30 g with 10 eV heat and 20 eV\(_\mathrm{ee}\) baseline resolution are feasible if read out by HEMT-based amplifiers. Such resolution allows for high discrimination between nuclear and electron recoils at low threshold. This capability is of major interest for coherent elastic neutrino scattering and low-mass dark matter experiments such as Ricochet and EDELWEISS.
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Acknowledgements
This work was supported by the LabEx Lyon Institute of Origins (ANR-10-LABX-0066) of the Universite de Lyon in the framework “Investissements d’Avenir” (ANR-11-IDEX-00007), by the Cross-Disciplinary Program on Instrumentation and Detection of CEA in the framework of the BASKET project and has received funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program under Grant Agreement ERC-StG-CENNS 803079. We thank EDELWEISS and Ricochet collaborations for their help and useful discussion in performing this work.
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Juillard, A., Billard, J., Chaize, D. et al. Low-Noise HEMTs for Coherent Elastic Neutrino Scattering and Low-Mass Dark Matter Cryogenic Semiconductor Detectors. J Low Temp Phys 199, 798–806 (2020). https://doi.org/10.1007/s10909-019-02269-5
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DOI: https://doi.org/10.1007/s10909-019-02269-5