Journal of Low Temperature Physics

, Volume 187, Issue 5–6, pp 565–572 | Cite as

Comparison of Critical Current Scaling Behaviors in \(\hbox {MgB}_{2}\)/SiC/Si Thin Films

  • Akihiko Nishida
  • Chihiro Taka
  • Stefan Chromik
  • Rudolf Durny


Scaling behaviors of critical current density \(J_{c}\) in \(\hbox {MgB}_{2}\) thin films are investigated on different films with thickness of 100 nm, in comparison with 50- and 10-nm films based on a comprehensive scaling formula. Experimental data are reduced and analyzed with the formula over a wide range of magnitudes. In 100- and 50-nm films the single scaling function has been able to fit experimental \(J_{c}\) data up to ten orders of magnitudes with appropriate flux pinning parameters. On the other hand, for the 10-nm film, different \(J_{c}\) dependences were found on temperature and magnetic field, concerning anomalous or granular superconductivity.


\(\hbox {MgB}_{2}\) Critical current Scaling behavior 



This work was supported in part by the Central Research Laboratory, Fukuoka University (Project #145004), and magnetic measurements were taken at the Advanced Materials Institute Facilities established at Fukuoka University under the support from the Ministry of Education, Culture, Sports, Science and Technology.


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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  1. 1.Department of Applied PhysicsFukuoka UniversityFukuokaJapan
  2. 2.Institute of Electrical EngineeringSlovak Academy of SciencesBratislavaSlovak Republic
  3. 3.Department of PhysicsSlovak University of TechnologyBratislavaSlovak Republic

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