Journal of Low Temperature Physics

, Volume 187, Issue 5–6, pp 596–601 | Cite as

Development of Cryogenic Enhancement-Mode Pseudomorphic High-Electron-Mobility Transistor Amplifier

  • T. Hirata
  • T. Okazaki
  • K. Obara
  • H. Yano
  • O. Ishikawa
Article
  • 87 Downloads

Abstract

This paper reports the technical details of the development of a low-temperature amplifier for nuclear magnetic resonance measurements of superfluid \({}^3\)He in very confined geometries. The amplifier consists of commercially available enhancement-mode pseudomorphic high-electron-mobility transistor devices and temperature-insensitive passive components with an operating frequency range of 0.2–6 MHz.

Keywords

Superfluid \({}^3\)He Superfluid \({}^3\)He in restricted geometry Low-temperature technique Cryogenic amplifier 

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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  1. 1.Department of Physics, Graduate School of ScienceOsaka City UniversityOsakaJapan

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