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Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure

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Abstract

We have measured the longitudinal and Hall resistivities in the quantum Hall regime at magnetic fields B up to 9 T and temperatures \(T =(2.9\div 50)\) K for the HgCdTe/HgTe/HgCdTe heterostructure with a wide HgTe quantum well. The temperature-induced transport at the resistivity minima corresponding to the quantum Hall plateaus has been studied within the concept of hopping conduction in a strongly localized electron system. An analysis of the variable-range hopping conductivity in the regions of the first and second quantum Hall plateaus provided an opportunity to determine the value and the magnetic-field dependence of the localization length with the experimental estimation of the critical indices.

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Acknowledgments

This work was carried out as part of the government task “Spin” No. 01201463330 with partial support from the Russian Foundation for Basic Research (RFBR) Grant No. 14-02-00151. The measurements were done in the Testing center of nanotechnology and advanced materials of M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences.

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Authors and Affiliations

  1. M.N. Miheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, Yekaterinburg, Russia

    Yu. G. Arapov, S. V. Gudina, V. N. Neverov, S. M. Podgornykh, M. R. Popov, G. I. Harus, N. G. Shelushinina & M. V. Yakunin

  2. A.V. Rzhanov Institute of Semiconductor Physics of Siberian Division of Russian Academy of Sciences, Novosibirsk, Russia

    S. A. Dvoretsky & N. N. Mikhailov

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  1. Yu. G. Arapov
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  2. S. V. Gudina
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  3. V. N. Neverov
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  4. S. M. Podgornykh
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  5. M. R. Popov
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  6. G. I. Harus
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  7. N. G. Shelushinina
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  8. M. V. Yakunin
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  9. S. A. Dvoretsky
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  10. N. N. Mikhailov
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Correspondence to S. V. Gudina.

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Arapov, Y.G., Gudina, S.V., Neverov, V.N. et al. Variable-Range Hopping Conductivity in Quantum Hall Regime for HgTe-Based Heterostructure. J Low Temp Phys 185, 665–672 (2016). https://doi.org/10.1007/s10909-016-1477-0

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  • DOI: https://doi.org/10.1007/s10909-016-1477-0

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