Abstract
We report here the electronic band structures of symmetric type I GaAs (\(d_{1}= 2.83\) nm)/AlAs (\(d_{2}= 2.83\) nm) superlattice as a function of the well thickness \(d_{1}\) and the effect of the valence band offset \(\Lambda \), the ratio \(d_{2}\)/\(d_{1}\), and the temperature on the band gap energy, performed in the envelop function formalism. These results are compared and discussed with the experimental measurements reported in the literature.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
M. Herman, W. Richter, H. Sitter, Epitaxy. SE - 7 (Springer, Berlin, 2004), pp. 131–170
F. Janiak, M. Dyksik, M. Motyka, K. Ryczko, J. Misiewicz, K. Kosiel, M. Bugajski, Opt. Quantum Electron. 47, 945 (2015)
J.L. Robert, F. Bosc, J. Sicart, V. Mosser, J. Lasseur, J. Appl. Phys. 87, 2941 (2000)
R. Tsu, Superlattice to Nanoelectronics (Elsevier, Amsterdam, 2005)
S. Adachi, GaAs and Related Materials?: Bulk Semiconducting and Superlattice Properties (World Scientific, Singapore, 1994)
L. Pavesi, M. Guzzi, J. Appl. Phys. 75, 4779 (1994)
B. Fluegel, K. Alberi, J.L. Reno, A. Mascarenhas, Jpn. J. Appl. Phys. 54, 042402 (2014)
R. Cingolani, K. Ploog, L. Baldassarre, M. Ferrara, M. Lugarà, C. Moro, Appl. Phys. A 50, 189 (1990)
M. Nakayama, K. Imazawa, I. Tanaka, H. Nishimura, Solid State Commun. 88, 43 (1993)
G. Bastard, Phys. Rev. B 24, 5693 (1981)
G. Bastard, Phys. Rev. B 25, 7584 (1982)
I. Vurgaftman, J.R. Meyer, L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001)
S.B. Zhang, M.L. Cohen, S.G. Louie, D. Tománek, M.S. Hybertsen, Phys. Rev. B 41, 10058 (1990)
Y. Wang, F. Zahid, Y. Zhu, L. Liu, J. Wang, H. Guo, Appl. Phys. Lett. 102, 132109 (2013)
M. Braigue, A. Nafidi, A. Idbaha, H. Chaib, H. Sahsah, M. Daoud, B. Marí Soucase, M. Mollar García, K. Chander Singh, B. Hartiti, J. Low Temp. Phys. 171, 808 (2013)
E.O. Kane, J. Phys. Chem. Solids 1, 249 (1957)
G. Bastard, Wave Mechanics Applied to Semiconductor Heterostructures (Les Editions de Physique, Paris, 1988)
O. Madelung, U. Rössler, M. Schulz (eds.), Group IV Elements, IV-IV and III-V Compounds. Part B - Electronic, Transport, Optical and Other Properties (Springer, Berlin, 2002)
S. Krylyuk, D.V. Korbutyak, V.G. Litovchenko, R. Hey, H.T. Grahn, K.H. Ploog, Appl. Phys. Lett. 74, 2596 (1999)
K.E. Glukhov, A.I. Bercha, D.V. Korbutyak, V.G. Litovchenko, Semiconductors 38, 410 (2004)
M. Nakayama, I. Tanaka, I. Kimura, H. Nishimura, Jpn. J. Appl. Phys. 29, 41 (1990)
V.G. Litovchenko, D.V. Korbutyak, S.G. Krylyuk, Y. Kryuchenko, Mater. Sci. Eng. C 19, 439 (2002)
H. Ünlü, Solid State Electron. 35, 1343 (1992)
R. Cingolani, M. Holtz, R. Muralidharan, K. Ploog, K. Reimann, K. Syassen, Surf. Sci. 228, 217 (1990)
J. Humlek, F. Luke, K. Ploog, Phys. Rev. B 42, 2932 (1990)
T. Nakazawa, T. Matsuoka, T. Ohya, K. Taniguchi, C. Hamaguchi, H. Kato, Y. Watanabe, Proc. SPIE 1286, 244 (1990)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Barkissy, D., Nafidi, A., Boutramine, A. et al. Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures. J Low Temp Phys 182, 185–191 (2016). https://doi.org/10.1007/s10909-015-1437-0
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10909-015-1437-0