Atomic Layer Deposition of Tunnel Barriers for Superconducting Tunnel Junctions
We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal–insulating–superconducting or superconducting–insulating–superconducting tunnel junctions. We use atomic layer deposition and an aluminum wetting layer to form a nanometer scale insulating barrier on gold films. Electronic transport measurements confirm that single-particle electron tunneling is the dominant transport mechanism, and the measured current–voltage curves demonstrate the viability of using these devices as self-calibrated, low temperature thermometers with a wide range of tunable parameters. This work represents a promising first step for superconducting technologies with deposited tunnel junction barriers. The potential for fabricating high performance junction refrigerators is also highlighted.
KeywordsSuperconducting tunnel junctions Atomic layer deposition Tunnel barriers
- 17.Elliot A, Malek G, Wille L, Lu R, Han S, Wu J, Talvacchio J, Lewis R, IEEE Trans. Appl. Supercond. 99 (2013) (in press)Google Scholar