Journal of Low Temperature Physics

, Volume 172, Issue 3–4, pp 202–211 | Cite as

Electrical Noise and Transport Properties of Graphene

  • Nan Sun
  • Kristof Tahy
  • Huili Xing
  • Debdeep Jena
  • Gerald Arnold
  • Steven T. Ruggiero


We present a study of the noise properties of single-layer exfoliated graphene as a function of gate bias. A tunnel/trap model is presented based on the interaction of graphene electrons with the underlying substrate. The model incorporates trap position, energy, and barrier height for tunneling into a given trap—along with the band-structure of the graphene—and is in good accord with the general characteristics of the data.


Graphene 1/f noise Transport Tunneling 


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Copyright information

© Springer Science+Business Media New York 2013

Authors and Affiliations

  • Nan Sun
    • 1
  • Kristof Tahy
    • 2
  • Huili Xing
    • 2
  • Debdeep Jena
    • 2
  • Gerald Arnold
    • 1
  • Steven T. Ruggiero
    • 1
  1. 1.Department of PhysicsUniversity of Notre DameNotre DameUSA
  2. 2.Department of Electrical EngineeringUniversity of Notre DameNotre DameUSA

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