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Modelling the Resistive State in a Transition Edge Sensor

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Abstract

We have developed a model for the resistive transition in a transition edge sensor (TES) based on the model of a resistively shunted junction, taking into account phase-slips of a superconducting system across the barriers of the tilted washing board potential. We obtained analytical expressions for the resistance of the TES, R(T,I), and its partial logarithmic derivatives α I and β I as functions of temperature and current. We have shown that all the major parameters describing the resistive state of the TES are determined by the dependence on temperature of the Josephson critical current, rather than by intrinsic properties of the S-N transition. The complex impedance of a pristine TES exhibits two-pole behaviour due to its own intrinsic reactance.

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Authors and Affiliations

  1. Department of Physics, Lancaster University, Lancaster, LA1 4ER, UK

    A. Kozorezov & J. K. Wigmore

  2. Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, Enschede, The Netherlands

    A. A. Golubov

  3. Advanced Studies and Technology Preparation Division, Scientific Projects Department, European Space Agency ESTEC, Postbus 299, 2200AG, Noordwijk, The Netherlands

    D. D. E. Martin

  4. SRON National Institute for Space Research, Sorbonnelaan 2, Utrecht, 3584 CA, The Netherlands

    P. A. J. de Korte, M. A. Lindeman, R. A. Hijmering, J. van der Kuur, H. F. C. Hoevers & L. Gottardi

  5. Nuclear Physics Institute, Moscow State University, 119992, Moscow, Russia

    M. Y. Kupriyanov

Authors
  1. A. Kozorezov
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  2. A. A. Golubov
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  3. D. D. E. Martin
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  4. P. A. J. de Korte
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  5. M. A. Lindeman
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  6. R. A. Hijmering
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  7. J. van der Kuur
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  8. H. F. C. Hoevers
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  9. L. Gottardi
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  10. M. Y. Kupriyanov
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  11. J. K. Wigmore
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Corresponding author

Correspondence to A. Kozorezov.

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Kozorezov, A., Golubov, A.A., Martin, D.D.E. et al. Modelling the Resistive State in a Transition Edge Sensor. J Low Temp Phys 167, 114–120 (2012). https://doi.org/10.1007/s10909-012-0490-1

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  • DOI: https://doi.org/10.1007/s10909-012-0490-1

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