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Input Noise Voltage Below 1 nV/Hz1/2 at 1 kHz in the HEMTs at 4.2 K

Journal of Low Temperature Physics volume 167, pages 632–637 (2012)Cite this article

Abstract

Specific High Electron Mobility Transistors (HEMTs) have been realized and characterized. At 4.2 K, with a drain-source current I ds of 1.55 mA and drain-source voltage V ds of 100 mV, the transistor has the following electrical characteristics: a transconductance and an output conductance of 69 and 3.8 mS, respectively, leading to an intrinsic voltage gain of 18; an input gate-source capacitance C gs of about 31 pF; and a gate leakage current less than 0.2 pA. An equivalent input noise voltage lower than 1 nV/Hz1/2 at 1 kHz has been achieved when I ds=1.55 mA at V ds=100 mV. Hence, our results show that the specific HEMTs should be a suitable transistor for future ultra-low noise deep cryogenic low-frequency high-impedance readout electronics.

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Acknowledgement

This work was partly supported by the Réseau RENATECH, “le RTRA Triangle de la Physique” grants N∘2008-015T and n∘2009-004T and European FP7-263455.

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Authors and Affiliations

  1. Laboratoire de Photonique et de Nanostructures, CNRS, Route de Nozay, 91460, Marcoussis, France

    Y. X. Liang, Q. Dong, U. Gennser, A. Cavanna & Y. Jin

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  1. Y. X. Liang
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  2. Q. Dong
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  3. U. Gennser
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  4. A. Cavanna
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  5. Y. Jin
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Correspondence to Y. X. Liang.

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Liang, Y.X., Dong, Q., Gennser, U. et al. Input Noise Voltage Below 1 nV/Hz1/2 at 1 kHz in the HEMTs at 4.2 K. J Low Temp Phys 167, 632–637 (2012). https://doi.org/10.1007/s10909-012-0479-9

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  • DOI: https://doi.org/10.1007/s10909-012-0479-9

Keywords

  • Low temperature
  • Low frequency noise
  • Low powder
  • Transistors
  • HEMTs
  • Field-effected transistors