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Temperature Dependent I–V and Resistance Characterization of SuperCDMS Germanium Crystals

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Abstract

We have built a versatile, compact 3He test facility to evaluate high-purity Ge (HPGe) SuperCDMS (Cryogenic Dark Matter Search) detectors. We are able to rapidly identify photolithographic or other defects in the thousands of W-Al transition edge sensors (TESs) on each detector and to evaluate the performance of the underlying substrate. We describe our simple method to measure current-voltage (I–V) characteristics and R vs. T behavior of HPGe detector crystals with resistances up to 100 GΩ. This provides a way to quickly perform diagnostic physics studies. Results provide critical data that give early warning that a crystal may not be suitable for the SuperCDMS underground experiment. Data from tests made on several kg-scale detectors are presented.

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Acknowledgements

This work was supported in part by the U.S. Department of Energy under grant number DE-FG02-04ER4295 and by the National Science Foundation under grant number PHY-0801712. The authors thank C. Kilbourne for loaning us an extra 8 channel LR-720 MUX board. We also thank many CDMS collaborators, including B. Cabrera and R. Moffatt for helpful discussions, and A. Tomada for detector packaging and 3He systems support.

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Authors and Affiliations

  1. Department of Physics, Stanford University, Stanford, CA, 94305, USA

    B. Shank, D. Q. Nagasawa, J. J. Yen, M. Cherry & B. A. Young

  2. Department of Physics, Santa Clara University, Santa Clara, CA, 95053, USA

    B. A. Young

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  1. B. Shank
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  2. D. Q. Nagasawa
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  3. J. J. Yen
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  4. M. Cherry
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  5. B. A. Young
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Correspondence to B. Shank.

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Shank, B., Nagasawa, D.Q., Yen, J.J. et al. Temperature Dependent I–V and Resistance Characterization of SuperCDMS Germanium Crystals. J Low Temp Phys 167, 202–207 (2012). https://doi.org/10.1007/s10909-011-0449-7

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  • DOI: https://doi.org/10.1007/s10909-011-0449-7

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