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Influence of Cu Irons on Structural, Optical, and Electrical Properties of Pure WS2 Thin Films and Development of p-Si/n-Cu@WS2 Photodiode for Optoelectronic Application

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Abstract

Presently, the applications of optoelectronics products have assisted the fields of telecommunication in providing value-added products. In this sense, pure Tungsten disulphide (WS2) and Copper doped WS2 thin films are coated via the JNSP technique with different doping levels such as 1, 3, and 5 wt% of Cu, and the optimized substrate temperature of 450 °C. The morphology, structural, particle size, optical, and electrical properties of coated pristine and Cu-WS2 thin films were characterized by scanning electron microscopy (SEM), energy dispersive microscopy (EDS), X-ray diffraction (XRD), UV spectra, Photoluminescence spectroscopic (PL) and Hall Effect measurements. The XRD results exhibit the prepared films have polycrystalline in nature with a tetragonal phase and the calculated crystallite size varied between 16 and 74 nm. The SEM images show the uniform grain size. The optical bandgap of 2.42 eV was obtained in the 5 wt% of Cu doped films. Hall measurements depicted that the pristine and Cu-doped WS2 films have n-type behaviour with carrier concentration is about 108 cm−3. Moreover, the fabricated p-Si/n-CuWS2 diode parameters like ideality factor (n), barrier height (ΦB), and reverse saturation current (Io) values are measured.

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Acknowledgements

The authors gratefully acknowledge the financial support from the Department of Science and Technology-Science and Engineering Research Board, Government of India, for the major research project (EMR/2016/007874).

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Authors and Affiliations

  1. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, 641 020, Tamil Nadu, India

    P. Sumathi & J. Chandrasekaran

  2. Department of Electronics, Cherraan’s Arts Science College, Kangayam, 638 701, Tamil Nadu, India

    S. Muthukrishnan

  3. Department of Environmental Engineering and Management, Chaoyang University of Technology, 41349, Taichung, Taiwan

    J. H. Chang & K. Mohanraj

  4. Department of Electronics, CMS College of Science and Commerce, Coimbatore, 641 049, Tamil Nadu, India

    S. Karthik Kannan

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  1. P. Sumathi
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Sumathi, P., Chandrasekaran, J., Muthukrishnan, S. et al. Influence of Cu Irons on Structural, Optical, and Electrical Properties of Pure WS2 Thin Films and Development of p-Si/n-Cu@WS2 Photodiode for Optoelectronic Application. J Inorg Organomet Polym 32, 63–74 (2022). https://doi.org/10.1007/s10904-021-02110-1

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