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Enhancing of Al/Sn-HfO2/n-Si (MIS) Schottky barrier diode performance through the incorporation of Sn ions on high dielectric HfO2 thin films formed by spray pyrolysis

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Abstract

In this work, we have successfully prepared the nano-coral to be intact with the mesoporous of Sn-HfO2 thin films through the (jet nebulizer spray pyrolysis) JNSP technique from different Sn (5, 10, 15 Wt.%) to improve the MIS Schottky diode Al/Sn-HfO2/n-Si. To achieve the phase transformations (monoclinic to orthorhombic) in pure hafnium oxide thin films, we have added the Sn ions as the composite at optimized temperature 600 °C. The XRD characteristic used to determine the structural parameters such as the phase, grain size for pure HfO2, and composite Sn-HfO2 films. The mesoporous with irregularly shaped balls and nano coral-like morphology have been observed through FESEM images. The absorption coefficients and bandgap energy have been determined from the UV Vis spectrum. The EDAX elementary analysis has confirmed the presence of Sn, Hf, O elements in each film. The XPS spectrum has confirmed Sn's presence and binding peak with a spin-orbit on the films' surface. I-V curves of forward and reverse bias determine the barrier height, ideality factor, and saturation currents from the thermionic emission theory. All the Al/Sn@HfO2/n-Si diode parameters are strongly improved after the incorporation of Sn ions.

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Acknowledgements

Authors would like express their sincer gratitude to Mr Goutam P Facility Technologist -process intergration, NNFC, CeNSE, Indian Institute of Science (IISc.), Bengaluru for his valuable technical supports. Also, the authors would like to express their gratitude to Advance Research Instrumentation Centre (ARIC), Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore for providing instrument facilities. The authors gratefully acknowledge the financial support from the Department of Science and Technology-Science and Engineering Research Board, Government of India, for the major research project (EMR/2016/007874). Author M. Shkir would like to express his gratitude to King Khalid University, Saudi Arabia for providing administrative and technical supports.

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  1. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, 641 020, Tamil Nadu, India

    P. Harishsenthil, J. Chandrasekaran & R. Marnadu

  2. Advanced Functional Materials & Optoelectronics Laboratory (AFMOL), Department of Physics, Faculty of Science, King Khalid University, Abha, 61413, Saudi Arabia

    Mohd Shkir

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Harishsenthil, P., Chandrasekaran, J., Marnadu, R. et al. Enhancing of Al/Sn-HfO2/n-Si (MIS) Schottky barrier diode performance through the incorporation of Sn ions on high dielectric HfO2 thin films formed by spray pyrolysis. J Inorg Organomet Polym 31, 3686–3699 (2021). https://doi.org/10.1007/s10904-021-01997-0

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