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Impact of Zn2+ Doping on the Structural, Morphological and Photodiode Properties of V2O5 Nanorods

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Abstract

In the present study, the effects of Zn2+ doping on the microstructural, morphological and photodiode response of the V2O5 nanorods have been studied. Pure and Zn2+ doped V2O5 nanorods were prepared by a simple and cost effective wet chemical solution process. The XRD studies confirmed that the pure and Zn2+ doped samples exhibit crystalline nature with mixed phases for Zn doping. From the morphology analysis, it is observed that substitution of Zn2+ into the V2O5 matrix is found to gradually transform the morphology from hexagonal face rods to short rods mixed with the plate like structures. The luminescence features of nanostructures are analyzed using photoluminescence studies. Moreover, the V2O5/p-Si and ZnV2O5/p-Si photodiodes parameters were studied under dark and light environments.

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Authors and Affiliations

  1. PG and Research Department of Physics, Kongunadu Arts and Science College, Coimbatore, Tamil Nadu, 641029, India

    N. Senthil Kumar

  2. Department of Environmental Engineering and Management, Chaoyang University of Technology, Taichung, 41349, Taiwan

    J. H. Chang & K. Mohanraj

  3. Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan

    Mon-Shu Ho, Babu Balraj & S. Chandrasekar

  4. Innovation and Development Center of Sustainable Agriculture (IDCSA), National Chung Hsing University, Taichung, 40227, Taiwan

    Mon-Shu Ho, Babu Balraj & S. Chandrasekar

  5. Department of Electronic Engineering, School of Electronic Science and Technology, Xiamen University, Xiamen, 361005, China

    B. Mohanbabu & Donghui Guo

  6. Department of Physics, Sri Ramakrishna College of Arts and Science, Peelamedu, Tamil Nadu, 641006, India

    M. Gowtham

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  1. N. Senthil Kumar
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Kumar, N.S., Chang, J.H., Ho, MS. et al. Impact of Zn2+ Doping on the Structural, Morphological and Photodiode Properties of V2O5 Nanorods. J Inorg Organomet Polym 31, 1066–1078 (2021). https://doi.org/10.1007/s10904-020-01751-y

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