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Effect of Organic Additives on the Characteristics of Al/Organic Additive:ZrO2/p-Si Metal–Insulator-Semiconductor (MIS) Type Schottky Barrier Diodes

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Abstract

In this work, zirconium dioxide (ZrO2) thin films were prepared on glass substrates with organic additives such as polyethylene glycol-6000 (PEG), polysorbate-80 (P80), triton X-100 (T100), citric acid (CA), tartaric acid (TA), and oxalic acid (OA) by sol–gel spin coating technique. The prepared thin films were annealed at 600 °C and their structural, morphological, optical and dc electrical properties were studied. From the XRD pattern, the crystal structure of the ZrO2 films was found to be monoclinic. The SEM micrographs of PEG:ZrO2 and CA:ZrO2 thin films exhibited rod-shaped and square-shaped grains, respectively. The EDX analysis confirmed the presence of Zr and O elements in the ZrO2 films. The UV–Vis analysis showed a higher transmittance for the PEG:ZrO2 and T100:ZrO2 films. The optical band gap (Eg) varied in the range of 5.66–5.83 eV. DC electrical conductivity (σdc) increased with a decrease of activation energy (Ea) for organic additive:ZrO2 thin films compared to pure ZrO2. A maximum value of σdc was noticed for the PEG:ZrO2 thin film. Metal–insulator-semiconductor type Schottky barrier diodes (Al/organic additive:ZrO2/p-Si) were fabricated and their electrical characteristics were studied. Results showed that the barrier height (ΦB), series resistance (Rs) and ideality factor (n) decreases for Al/organic additive:ZrO2/p-Si SBDs from that of the Al/Pure ZrO2/p-Si.

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Acknowledgements

The authors thank the Department of Science and Technology-FIST, for providing the instrument facilities (Project No.: SR/FST/COLLEGE-154/2013) at Sri Ramakrishna Engineering College, Coimbatore, India.

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Authors and Affiliations

  1. Department of Physics, Sri Ramakrishna Engineering College, Coimbatore, Tamil Nadu, India

    K. Sasikumar

  2. Department of Physics, Sri Ramakrishna Mission Vidyalaya College of Arts and Science, Coimbatore, Tamil Nadu, India

    R. Bharathikannan & J. Chandrasekaran

  3. Department of Physics, Vivekanandha College of Arts & Sciences for Women, Namakkal, Tamil Nadu, India

    M. Raja

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Sasikumar, K., Bharathikannan, R., Chandrasekaran, J. et al. Effect of Organic Additives on the Characteristics of Al/Organic Additive:ZrO2/p-Si Metal–Insulator-Semiconductor (MIS) Type Schottky Barrier Diodes. J Inorg Organomet Polym 30, 564–572 (2020). https://doi.org/10.1007/s10904-019-01216-x

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