A Review on Nanoporous Gallium Nitride (NPGaN) Formation on P-Type Silicon Substrate with the Mather-type Plasma Focus Device (MPFD)

Article

Abstract

A Mather-type plasma focus device (MPFD) was unitized to fabricated porous gallium nitride (GaN) on p-type silicon (Si) substrate with a <100> crystal orientation for the first time in a deposition process. GaN was deposited on Si with four and seven shots. The samples went through a three phase annealing procedure. First, the semiconductors were annealed in the PFD with nitrogen plasma shots after their deposition, second, a thermal chemical vapor deposition (TCVD) annealed the samples for 1 at 1050 °C by nitrogen gas at 1 Pa pressure. Finally, an electric furnace annealed the samples for 1 h at 1150 °C with continues flow of nitrogen. Porous GaN structures were observed by field emission scanning electron microscopy (FE-SEM) and atomic force microscopy (AFM). Furthermore, X-ray diffraction (XRD) analyze was carried out to determine the crystallinity of GaN after the samples were annealed. Energy-dispersive X-ray spectroscopy (EDX) indicated the amount of gallium, nitrogen, and oxygen due to self-oxidation of the samples. Photoluminescence (PL) spectroscopy revealed emissions at 2.94 and 3.39 eV which shows hexagonal wurtzite crystal structures was formed.

Keywords

GaN Photoluminescence Plasma focus device Porous Semiconductors 

Notes

Acknowledgements

The author would like to acknowledge the fusion laboratory of Amirkabir University of Technology for the use of their PFD.

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Copyright information

© Springer Science+Business Media New York 2017

Authors and Affiliations

  1. 1.Plasma Physics Research Center, Science and Research BranchIslamic Azad UniversityTehranIran

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