In investigating the volt-ampere characteristic of an Al−Al2O3−Ag2Se−Ag (metal−oxide−semiconductor) structure, it has been found that polarity-dependent effects of switchover and memory are stably observed in it in a wide temperature range (77–400 K). In the region of phase transition of argentum selenide (400–406 K), there are manifested valve-like properties, with the result that electrical conductivity decreases by three to four orders of magnitude.
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 86, No. 2, pp. 447–450, March–April, 2013.
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Gadzhieva, G.S., Akhmedov, I.A. & Abdul-zade, N.N. Switching and Valve-Like Properties of an AL−AL2O3−AG2SE−AG MOS Structure. J Eng Phys Thermophy 86, 475–478 (2013). https://doi.org/10.1007/s10891-013-0858-3
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DOI: https://doi.org/10.1007/s10891-013-0858-3