Investigation of the heat transfer processes under the action of pulse power

The temperature of the rectifying metal–p-region junction and the p–n ⁺ junction and the temperature difference between the p–n junction and the diode case have been estimated experimentally. The dependence of the temperature difference between the diode case and the thermostat on the heat pulse power has also been investigated. It has been shown that the heat exchange of thermal conduction in the p ⁺–p–m structure occurs via the m + Ag layer, in the epitaxial p ⁺–n–p ⁺ structure it occurs through the n ⁺Si + Ag layer, and in the diffusion p ⁺–n–p ⁺ structure through the n _difSi + n ⁺Si + Ag layers, which should be taken into account in calculating the thermal resistances of diodes.