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Temperature stresses in hetrogeneous barium-titanate-based thermistors

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Journal of Engineering Physics and Thermophysics Aims and scope

Temperature stresses in semiconductor barium-titanate-based ceramics with a layer structure under the action of current loads have been investigated by numerical methods. It has been shown that by optimizing the thickness ratios between the layers and their properties one can markedly decrease the maximum stresses compared to homogeneous thermistors.

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Authors and Affiliations

  1. Institute of Engineering Acoustics, National Academy of Sciences of Belarus, 13 Lyudnikov Ave., Vitebsk, 210023, Belarus

    V. N. Shut & A. V. Gavrilov

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  1. V. N. Shut
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  2. A. V. Gavrilov
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Correspondence to V. N. Shut.

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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 82, No. 5, pp. 981–983, September–October, 2009.

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Shut, V.N., Gavrilov, A.V. Temperature stresses in hetrogeneous barium-titanate-based thermistors. J Eng Phys Thermophy 82, 988–990 (2009). https://doi.org/10.1007/s10891-009-0269-7

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  • DOI: https://doi.org/10.1007/s10891-009-0269-7

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