We have considered the spectral characteristics of two-base structures with isotype heterojunctions and with Schottky and Mott barriers to the base regions and explained the features of the impurity and photovoltaic effects in two-base structures containing deep impurity levels of oxygen and intrinsic defects.
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Translated from Inzhenerno-Fizicheskii Zhurnal, Vol. 81, No. 5, pp. 1005–1009, September–October, 2008.
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Karimov, A.V., Edgorova, D.M., Giyasova, F.A. et al. Functional possibilities of Ag-N 0AlGaAs-n +GaAs-n 0GaInAs-au structures with an isotype base region. J Eng Phys Thermophy 81, 1050–1054 (2008). https://doi.org/10.1007/s10891-009-0106-z
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DOI: https://doi.org/10.1007/s10891-009-0106-z