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Effects of AgNO3 doping on the microstructure and the electrical properties of ZnO-based linear resistors

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Abstract

ZnO–Al2O3–MgO–La2O3–SiO2 system linear resistors were doped with various doping content of AgNO3 (0, 0.1, 0.2, 0.3, 0.4, and 0.5 mol%) for improving the electrical properties. All samples were synthesized at 1340 °C for 3 h using a solid-state sintering in the air ambient. The microstructure and crystal characterizations of the samples were analyzed by scanning electron microscope (SEM) and X-ray diffraction (XRD), respectively. The results of XRD indicate that the main phase of all samples was hexagonal wurtzite structure of ZnO. Also, LaAlO3 and ZnAl2O4 compounds are found formed in all experimental samples. From the SEM images, it can be seen that the average grain size of all doped samples increased compared to the undoped sample. This illustrated that doping of AgNO3 could promote the growth of ZnO grains. The dielectric and electrical properties of all samples were tested and analyzed. The results show that the resistivity of all doped samples increase with the increase of AgNO3 doping content, and the grain boundary barrier height decreased for all doped samples. When the doping content is 0.1 mol%, the ZnO linear resistor exhibits excellent performance with grain boundary barrier height (φ0) of 0.0345 eV, nonlinear coefficient (α) of 1.01, and resistance temperature coefficient (αT) of − 2.07 × 10–3/°C.

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Funding

This work was supported by the Guizhou Provincial Science and Technology Department [Grant No. QKHZC (2022) YB 080]; and the Guizhou Provincial Science and Technology Department [Grant No. QKHJC-ZK (2021) ZD 049].

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Authors and Affiliations

  1. College of Materials and Metallurgy, Gui Zhou University, Guiyang, 550025, China

    Wenbi Han, Chang Liu, Yuying Wang, Xu Wang, Chi Pang & Deyi Zheng

Authors
  1. Wenbi Han
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  2. Chang Liu
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  3. Yuying Wang
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  4. Xu Wang
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  5. Chi Pang
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  6. Deyi Zheng
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Contributions

Wenbi Han: Sample preparation, Data analysis, Original draft preparation, Chang Liu: collected important background information and participated in the preparation of samples and analysis of data, Yuying Wang: Data analysis assistance, Xu Wang: Reviewing. Chi Pang: Advising and revising original draft. Deyi Zheng: Conceptualization, Methodology, Writing and Editing. All authors read and contributed to the manuscript.

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Correspondence to Deyi Zheng.

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Han, W., Liu, C., Wang, Y. et al. Effects of AgNO3 doping on the microstructure and the electrical properties of ZnO-based linear resistors. J Mater Sci: Mater Electron 35, 965 (2024). https://doi.org/10.1007/s10854-024-12700-7

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  • DOI: https://doi.org/10.1007/s10854-024-12700-7

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