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Temperature-dependent Raman and dielectric studies of Sm and Zr Co-doped BaTiO3 ceramics

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Abstract

Sm and Zr co-doped BaTiO3 ceramics were investigated for their microstructure and dielectric characteristics. (Ba1 − xSmx)(Ti0.75Zr0.25)O3−δ (BSTZO) with x = 0.02, 0.04, and 0.06 mol% of ceramic compounds were prepared by solid-state reaction route. The primary objective is to obtain higher dielectric constant with lower dielectric loss in the proposed material composition. The prepared BSTZO and sintered compounds were found to be highly crystalline with a tetragonal perovskite structure. A typical X-ray photoelectron spectroscopy spectra of BSTZO sample with Sm = 0.02 mol% calcined at 1273 K revealed the elemental composition, binding energy, and chemical state of the elements. Oxygen vacancy concentrations evaluated by in situ high-temperature Raman spectroscopy in the temperature range of 301–773 K were found to decrease with increasing Sm3+ concentration and the substitution of the lowest concentration of Sm3+ (0.02 mol%) in the A site of the BSTZO was found to be higher (\({V}_{O}^{\cdot \cdot}\)= 1.98 × 1021 cm−3, at 773 K) than that of the other compositions. The measured maximum dielectric constant was found to be 1808, 2010, and 1736 for BSTZO pellet with x= 0.02, 0.04, and 0.06 mol%, respectively in the temperature range of 323–773 K and at frequency of 20 MHz. Among these compounds, (Ba0.96Sm0.04) (Ti0.75Zr0.25)O3−δ has shown high dielectric constant and low loss tangent compared to other compositions.

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The datasets generated during and/or analyzed during the current study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors are thankful to Vikram Sarabhai Space Centre, Indian Space Research Organization, Thiruvananthapuram for the financial support vide sanction no: ISRO/RES/3/684/15–16. They also thank Chancellor, President, Vice Presidents and Vice Chancellor of Sathyabama Institute of Science and Technology, Chennai-600119 for providing infrastructure and facilities.

Funding

Vikram Sarabhai Space Centre (VSSC), Indian Space Research Organization (ISRO), Thiruvananthapuram for the financial support vide sanction no: ISRO/RES/3/684/15–16.

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Authors and Affiliations

  1. Centre for Nanoscience and Nanotechnology, Sathyabama Institute of Science and Technology, Chennai, 600 119, India

    B. Vigneshwaran, P. Kuppusami & S. Ajithkumar

  2. Centre of Excellence for Energy Research, Sathyabama Institute of Science and Technology, Chennai, 600 119, India

    P. Kuppusami

  3. GOONWORLD Corporate Research Institute, Dong-guInovalley 26 Road 9-115, Daegu, Republic of Korea

    Madhan Kuppusamy

  4. Department of Physics, Saveetha School of Engineering, Saveetha Institute of Medical and Technical Science, Chennai, 602105, India

    Madhan Kuppusamy

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Methodology, Preparation, investigation, analysis and writing original draft—B.Vigneshwaran. Resources and formal analysis—Madhan kuppusamy.  Writing, review and editing—S. Ajithkumar.  Conceptualization, funding acquisition, supervision of experiments, and revision of the manuscript—P. Kuppusami.

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Vigneshwaran, B., Kuppusami, P., Ajithkumar, S. et al. Temperature-dependent Raman and dielectric studies of Sm and Zr Co-doped BaTiO3 ceramics. J Mater Sci: Mater Electron 35, 353 (2024). https://doi.org/10.1007/s10854-024-12060-2

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