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Modulating surface-state-induced band bending for efficient charge transport and photoelectrochemical hydrogen production over bismuth vanadate photoanode

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Abstract

The main challenge in photoelectrochemical (PEC) hydrogen production is designing efficient photoanodes. Although bismuth vanadate (BiVO4) is an ideal photoanode light absorber. The fast charge recombination and poor charge transport rate of BiVO4 seriously restrict its application as PEC water decomposition photoanode. In order to improve these effects, in this work, the surface composition of bismuth vanadate was manipulated by introducing trace amount of β-bismuth oxide onto the surface. After that, the optimized photoanode’s photocurrent and hydrogen production were significantly improved, which are mainly attributed to the improvement of depletion region width and band bending, photogenerated carrier transfer, and separation. This work clarifies that only trace amount of second phase is needed to improve the photoelectrochemical activity by constructing heterojunction. We expect that the proposed strategy is applicable to improve the photoelectron conversion in bismuth-based semiconductors.

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The data that support the findings of this study are available from the corresponding author upon reasonable request.

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Acknowledgements

The authors gratefully acknowledge the financial support provided by the National Natural Science Foundation of China (No. 11747069) and the Foundation of Henan Educational Committee (No. 23A140007) for this research.

Funding

This work was funded by Innovative Research Group Project of the National Natural Science Foundation of China (Grant No. 11747069) and Foundation of Henan Educational Committee (Grant No. 23A140007).

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Authors and Affiliations

  1. National Demonstration Center for Experimental Physics Education, Henan Normal University, Xinxiang, 453007, China

    Jun Shang, Yajing Cheng, Xuyang Shen, Zhiyu Dai & Yanjun Gao

  2. Henan Key Laboratory of Photovoltaic Materials, Xinxiang, 453007, China

    Jun Shang

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  1. Jun Shang
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Correspondence to Jun Shang.

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Shang, J., Cheng, Y., Shen, X. et al. Modulating surface-state-induced band bending for efficient charge transport and photoelectrochemical hydrogen production over bismuth vanadate photoanode. J Mater Sci: Mater Electron 35, 276 (2024). https://doi.org/10.1007/s10854-024-12027-3

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