Abstract
Recently, ferroelectric-photovoltaics have come under the spotlight as a potential class of materials for application in photovoltaic devices. However, the broad bandgap of these ferroelectric-photovoltaic materials causes them to have modest photocurrents. To overcome this challenge hexamanganites can be used as alternatives to achieve high photovoltaic efficiency as it has a small band gap. Here we present a stable, non-toxic, and cost-efficient hexamanganite RMnO3 [R = Y, Er, Yb] thin films prepared and optimized by spray pyrolysis technique. The formation of the single phase is confirmed by XRD analysis. Morphological studies show grains are uniform and closely packed and the grain size increases with the decrease in ionic radii of rare-earth ions. From the UV Visible spectroscopic study, narrow optical band gap is observed for the films. With a carrier concentration of around 10+14 cm−3, Hall measurements proved that the films are p-type semiconductors. The maximum photoresponse was exhibited in the visible region for YMnO3 and ErMnO3 films and in the near IR region for YbMnO3 films. This research illuminates the exploration of stable oxide semiconductors with a small band gap for the suitability in futuristic solar cells.
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Acknowledgements
The Author (Inchara D R) is very thankful to Manipal Academy of Higher Education, Manipal for the T.M.A Pai fellowship (financial support) and Dr. Gowrish K Rao, MIT, MAHE, Manipal for the photoresponse measurements.
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This work was supported by Manipal Academy of Higher Education, Manipal by providing T.M.A Pai fellowship.
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Conceptualization, Formal Analysis, Investigation, Writing—Original Draft: IDR, Supervision, Writing—Review and Editing: MD, Resource (Providing Spray Pyrolysis facility), Review and Editing: GSC, Investigation, Data Curation: MSM.
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Inchara, D.R., Gurumurthy, S.C., Murari, M.S. et al. Investigation on spray pyrolyzed RMnO3 [R = Y, er, Yb] hexamanganite thin films for their suitability in photovoltaics. J Mater Sci: Mater Electron 35, 282 (2024). https://doi.org/10.1007/s10854-024-11962-5
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DOI: https://doi.org/10.1007/s10854-024-11962-5