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Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT

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Abstract

This study focuses on the Electrostatic, linearity, and analogue/RF parameters of a single heterojunction AlGaAs/GaAs-based high electron mobility transistor (HEMT). The device performance for multiple biases has been evaluated using different figures of merit. The Electrostatic, linearity, and analogue/RF performance have been analyzed from the on-wafer DC and RF measurements. A high ON-state current (31.72 mA) and a smaller sub-threshold swing (82.2 mV/dec) have been achieved. Parameters relating to linearities, such as gm, gm2, gm3, VIP2, VIP3, IIP3, 1-dB compression point, IMD3, THD and analogue/RF parameters like TGF, gds, Av, Cgs, Cgd, Cgg, fT and fmax have been analyzed under different Vds, and excellent results have been obtained for all the bias voltages. Higher values of gm, VIP2, VIP3, IIP3, 1-dB compression point, and lower values of gm2, gm3, IMD3, and THD have been obtained. The RF parameters have likewise yielded significant results in a similar manner. The device is revealed to have remarkable linearity and amplifying ability upon investigating the parameters as mentioned above.

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The data presented in this study are available on request from the authors.

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Funding

The authors would like to acknowledge the partial financial support from “The ICT Division, Government of the People’s Republic of Bangladesh” for the ICT Fellowship (2020–2021) awarded to Jannatul Naima with Grant Number: 56.00.0000.028.33.002.21-232.

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  1. Department of Electrical & Electronic Engineering, University of Chittagong, Chittagong, Bangladesh

    J. Naima & Mohammad A. Alim

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Contributions

Conceptualization, JN and MAA; methodology, JN and MAA; validation, MAA; investigation, JN and MAA; writing—original draft preparation, JN; writing—review and editing, MAA; supervision, MAA. All authors have read and agreed to the published version of the manuscript.

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Correspondence to Mohammad A. Alim.

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Naima, J., Alim, M.A. Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT. J Mater Sci: Mater Electron 35, 65 (2024). https://doi.org/10.1007/s10854-023-11803-x

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