Abstract
The theoretically predicted ferroelectric ZnSnS3 film was successfully grown for the first time using spray pyrolysis technique. The trigonal structure of the films with x-ray diffraction peaks corresponding to (110), (211), (01-1), and (210) planes of ZnSnS3 were observed. The direct energy band gap (\(\sim\)2.62 eV) and an indirect gap (\(\sim\)1.63 eV) of the films were estimated from the optical reflectivity spectra, and a broad photoluminescence emission peak was detected at around 2.58 eV. A band diagram was proposed to explain the optical properties of the film. The P–E measurement revealed that the grown ZnSnS3 films were ferroelectric with a saturated polarization value of 20.5 \(\upmu {\text{C}}/{\text{cm}}^{2}\). The Ni/ZnSnS3/FTO device shows a sizeable photovoltaic response with a maximum of 1.07 V (Voc) and 1.03 µA (Isc) under 532 nm light illumination with 14.92 mW/cm2 power density. The nature of the observed current–voltage characteristics curves of Ni/ZnSnS3/FTO device for two different polarization states was explained considering the formation of potential barriers at the Ni/ZnSnS3/FTO interfaces and its modulation by the polarization-induced depolarization field. The overall photovoltaic response of the Ni/ZnSnS3/FTO system was predominant by the depolarization field over the internal bias field due to the Schottky effect at the interfaces. The maximum responsivity value at zero-bias conditions for ZnSnS3films was \(1.45 {\upmu A}/{\text{W}}\).The ferroelectric ZnSnS3 could be a potential candidate for ferroelectric-based photodetector devices in the visible and near-infrared regions of the optical spectrum.
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References
H. Huang, Ferroelectric photovoltaics. Nat. Photonics 4, 132–135 (2010)
S.Y. Yang, J. Seidel, S.J. Byrnes, P. Shafer, C.-H. Yang, M.D. Rossell, P. Yu, Y.-H. Chu, J.F. Scott, J.W. Ager III., L.W. Martin, R. Ramesh, Above-bandgap voltages from ferroelectric photovoltaic devices. Nat. Nanotechnol. 5, 143–147 (2010)
M. Ichiki, H. Furue, T. Kobayashi, R. Maeda, Y. Morikawa, T. Nakada, K. Nonaka, Photovoltaic properties of (Pb, La)(Zr, Ti)O3 films with different crystallographic orientations. Appl. Phys. Lett. 87, 222903 (2005)
S. Song, D. Kim, H.M. Jang, B.C. Yeo, S.S. Han, C.S. Kim, J.F. Scott, β-CuGaO2 as a strong candidate material for efficient ferroelectric photovoltaics. Chem. Mater. 29, 7596–7603 (2017)
T. Choi, S. Lee, Y.J. Choi, V. Kiryukhin, S.W. Cheong, Switchable ferroelectric diode and photovoltaic effect in BiFeO3. Science 324, 63–66 (2009)
L. Pintilie, I. Vrejoiu, G. Le Rhun, M. Alexe, Short-circuit photocurrent in epitaxial lead zirconate-titanate thin films. J. Appl. Phys. 101, 064109 (2007)
G. Zhang, H. Wu, G. Li, Q. Huang, C. Yang, F. Huang, F. Liao, J. Lin, New high Tc multiferroics KBiFe2O5 with narrow band gap and promising photovoltaic effect. Sci. Rep. 3, 1265 (2013)
X. Yang, X. Su, M. Shen, F. Zheng, Y. Xin, L. Zhang, M. Hua, Y. Chen, V.G. Harris, Enhancement of photocurrent in ferroelectric films via the incorporation of narrow bandgap nanoparticles. Adv. Mater. 24, 1202 (2012)
T. Omata, H. Nagatani, I. Suzuki, M. Kita, H. Yanagi, N. Ohashi, Wurtzite CuGaO2: a new direct and narrow band gap oxide semiconductor applicable as a solar cell absorber. J. Am. Chem. Soc. 136, 3378–3381 (2014)
A.B. Swain, M. Rath, P.P. Biswas, M.S. RamachandraRao, P. Murugavel, Polarization controlled photovoltaic and self-powered photodetector characteristics in Pb-free ferroelectric thin film. APL Mater. 7, 011106 (2019)
M. Qin, K. Yao, Y.C. Liang, High efficient photovoltaics in nanoscaled ferroelectric thin films. Appl. Phys. Lett. 93, 122904 (2008)
M. Qin, K. Yao, Y.C. Liang, Photovoltaic mechanisms in ferroelectric thin films with the effects of the electrodes and interfaces. Appl. Phys. Lett. 95, 022912 (2009)
I. Suzuki, H. Nagatani, M. Kita, Y. Iguchi, C. Sato, H. Yanagi, N. Ohashi, T. Omata, First-principles calculations of ternary wurtzite β-CuGaO2. J. Appl. Phys. 119, 095701 (2016)
B. Kolb, A.M. Kolpak, First-principles design and analysis of an efficient, pb-free ferroelectric photovoltaic absorber derived from ZnSnO3. Chem. Mater. 27, 5899–5906 (2015)
J. Son, G. Lee, M.H. Jo, H. Kim, H.M. Jang, Y.H. Shin, Heteroepitaxial ferroelectric ZnSnO3 thin film. J. Am. Chem. Soc. 131, 8386–8387 (2009)
J.M. Wu, C. Xu, Y. Zhang, Z.L. Wang, Lead-free nanogenerator made from single ZnSnO3 micro belt. ACS Nano 6, 4335–4340 (2012)
K.Y. Lee, D. Kim, J.H. Lee, T.Y. Kim, Unidirectional high-power generation via stress-induced dipole alignment from ZnSnO3 nanocubes/polymer hybrid piezoelectric nanogenerator. Adv. Func. Mater. 24, 37–43 (2014)
R. Guo, R. Tian, D. Shi, H. Li, H. Liu, S-Doped ZnSnO3 nanoparticles with narrow band gaps for photocatalytic wastewater treatment. ACS Appl. Nano Mater. 2, 7755–7765 (2019)
S. Mukherjee, T. Maitra, A. Nayak, S. Mukherjee, A. Pradhan, M.K. Mukhopadhyay, B. Satpati, S. Bhunia, Microstructural and light emission properties of ZnSnP2 thin film absorber: study of native defects. Mater. Chem. Phys. 204, 147–153 (2018)
S. Sanna, S. Neufeld, M. Rusing, G. Berth, A. Zrenner, W.G. Schmidt, Raman scattering efficiency in LiTaO3 and LiNbO3 crystals. Phys. Rev. B 91, 224302 (2015)
M.N. Popov, J. Spitaler, V.K. Veerapandiyan, E. Bousquet, J. Hlinka, M. Deluca, Raman spectra of fine-grained materials from first principles. npj Comput. Mater. 6, 121 (2020)
X.-Y. Chen, J.-Q. Tan, K.-R. Su, J.-H. Yang, X.-F. Xu, G.-P. Luo, W.-L. Zhu, S.-M. Hu, G.-X. Lai, H. Ji, L.-T. Niu, First-principles study of R3c-MgSnX3 (X=O, S and Se) for photovoltaic and ferroelectric application. Phys. Lett. A 422, 127774 (2022)
M. Benyoussef, S. Saitzek, N.S. Rajput, M. Courty, M.E. Marssi, M. Jouiad, Experimental and theoretical investigations of low-dimensional BiFeO3 system for photocatalytic applications. Catalysts 12, 215–218 (2022)
B. Ofuonye, J. Lee, M. Yan, C. Sun, J.M. Juo, I. Ilesanmi, Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures. Semicond. Sci. Technol. 29, 095005–095015 (2014)
M.G. Helander, M.T. Greiner, Z.B. Wang, W.M. Tang, Work function of fluorine-doped tin oxide. J. Vac. Sci. Technol. A 29, 011019 (2011)
L.A. Burton, T.J. Whittles, D. Hesp, W.M. Linhart, J.M. Skelton, B. Hou, R.F. Webster, G. O’Dowd, C. Reece, D. Cherns, D.J. Fermin, T.D. Veal, V.R. Dhanak, A. Walsh, Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst. J. Mater. Chem. A 4, 1312–1318 (2016)
Y. Yang, S. Xue, S. Liu, J. Huang, J. Shen, Fabrication and characteristics of ZnS nanocrystals/polymer composite doped with tetraphenylbenzidine single layer structure light-emitting diode. Appl. Phys. Lett. 69, 377–379 (1996)
R.R. Mehta, B.D. Silverman, J.T. Jacobs, Depolarization fields in thin ferroelectric films. J. Appl. Phys. 44, 3379–3385 (1973)
J.R. Reitz, F.J. Milford, R.W. Christy, Foundations of Electromagnetic Theory, 3rd edn. (Narosa, India, 1986), p.428
C. Kittel, Introduction to Solid State Physics, 8th edn. (Wiley, India, 2012), p.405
D. Lee, S.H. Baek, T.H. Kim, J.G. Yoon, C.M. Folkman, C.B. Eom, T.W. Noh, Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects. Phys. Rev. B 84, 125305 (2011)
Y. Yuan, Z. Xiao, B. Yang, J. Huang, Arising applications of ferroelectric materials in photovoltaic devices. J. Mater. Chem. A 2, 6027–6041 (2014)
W. Ji, K. Yao, Y.C. Liang, Bulk photovoltaic effect at visible wavelength in epitaxial ferroelectric BiFeO3 thin films. Adv. Mater. 22, 1763–1766 (2010)
K. Mistewicz, M. Nowak, D. Stróz, Ferroelectric-photovoltaic effect in SbSi nanowires. Nanomaterials 9, 580 (2019)
S. Mukherjee, T. Maitra, A. Pradhan, S. Mukherjee, G. Manna, S. Bhunia, A. Nayak, Rapid responsive Mg/ZnSnP2/Sn photodetector for visible to near-infrared application. Sol. Energy Mater. Sol. Cells 189, 181–187 (2019)
A. Kathirvel, A.U. Maheswari, S.K. Batabyal, M. Sivakumar, BiFeO3-thiourea/carbon heterostructure based self-powered white light photodetector. Mater. Lett. 284, 128906 (2021)
Acknowledgements
The authors acknowledge the financial support from the Science and Engineering Research Board (SERB, DO No. CRG/2019/004571), New Delhi. The BL-13 beamline of Indus2 synchrotron radiation facility at RRCAT is highly acknowledged.
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MM: Methodology, experimental data acquisition, conceptualization, and review. SB: Methodology, experimental data acquisition, conceptualization, and review. AN: Supervision, conceptualization, data acquisition methodology, writing, review, and editing.
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Mohsin, M., Bhunia, S. & Nayak, A. Ferroelectric ZnSnS3 thin films: growth and measurement of photovoltaic properties. J Mater Sci: Mater Electron 34, 2194 (2023). https://doi.org/10.1007/s10854-023-11545-w
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DOI: https://doi.org/10.1007/s10854-023-11545-w